| PART |
Description |
Maker |
| PS21965-T |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
| ENA1845 |
Planar Ultrafast Rectifier, Low VF type, 20A, 600V, 1.4V, TO-220F-2FS
|
ON Semiconductor
|
| STGW20NB60HD 6204 |
N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT N沟道20A 600V 247 PowerMESH IGBT
N-CHANNEL 20A - 600V TO-247 PowerMESH TM IGBT
From old datasheet system
N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IKQ100N60T |
600V low loss switching series third generation
|
Infineon Technologies A...
|
| STB20NM60 STB20NM60-1 STP20NM60 STP20NM60FP STB20N |
N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET
N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
|
STMicroelectronics
|
| STB20NM60D |
N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET
N-channel 600V - 0.26ヘ - 20A - D2PAK FDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| MMBD1201 |
W orking Inve rse V oltage
|
TY Semiconductor Co., Ltd
|
| PS21962-ST |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-A PS21962-C |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| RJL60S5DPE |
600V - 20A - SJ MOS FET
|
Renesas Technology
|
